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Silicon Carbide MOSFET
N-Channel Enhancement Mode
Features
G3R' Technology with +15 V Gate Drive
Softer Rps(oN) v/s Temperature Dependency
LoRing" -Electromagnetically Optimized Design
Smaller Rc(in) and Lower Qc
Low Device Capacitances (Coss, Ckss)
Superior Cost-Performance lndex
Robust Body Diode with Low V and Low QRR
Industry-Leading UlL & Short-Circuit Robustness
Advantages
Compatible with Commercial Gate Drivers
Low Conduction Losses at all lemperatures
Reduced Ringing
Faster and More Efficient Switching
Lesser Switching Spikes and Lower Losses
Better Power Density and System Efficiency
Ease of Paralleling without Thermal Runaway
Higher System Reliability
Applications
? Solar Inverter
? EV Fast Charging
? Switched Mode Power Supply (SMPS)
? Auxiliary Power Supply
? High Voltage Converter
? Pulsed Power
