Description
The NP15N10G uses advanced trench technology
to provide excellent R DS(ON)
General Features
and low gate charge.It can
be used in a wide variety of applications.
? V DS =100V I D
R
=15A
DS(ON) (Typ.)=82m? @V GS
R
=10V
DS(ON) (Typ.)=90m? @V GS
? High density cell design for ultra low Rdson
=4.5V
? Fully characterized avalanche voltage and current
? Good stability and uniformity with high E
? Excellent package for good heat dissipation
AS
? Special process technology for high ESD capability
Application
? Automotive applications
? Hard switched and high frequency circuits
? Uninterruptible power supply
Package
? TO-252-2L